| Verfasser |
Titel |
Publiziert in |
Zitat |
| M. Luisier, S.G. Kim, T.B. Boykin, G. Klimeck |
 - Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors
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Zitat anzeigen |
M. Luisier, S.G. Kim, T.B. Boykin, G. Klimeck, Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors.
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| M. Luisier |
- Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultra-Thin-Body n-FETs
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Zitat anzeigen |
M. Luisier, Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultra-Thin-Body n-FETs.
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| D. Dolgos, H. Meier, A. Schenk, B. Witzigmann |
- Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter
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Zitat anzeigen |
D. Dolgos, H. Meier, A. Schenk, B. Witzigmann, Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter.
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| M. Luisier |
- Investigation of Thermal Transport Degradation in Rough Si Nanowires
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Zitat anzeigen |
M. Luisier, Investigation of Thermal Transport Degradation in Rough Si Nanowires.
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| R. Rhyner, C. Bessire, A. Schenk, L. De Michielis, A. Biswas, H. Riel, A.M. Ionescu |
- Enabling Energy Efficient Tunnel FET-CMOS Co-Design by Compact Modeling and Simulation
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Zitat anzeigen |
R. Rhyner, C. Bessire, A. Schenk, L. De Michielis, A. Biswas, H. Riel, A.M. Ionescu, Enabling Energy Efficient Tunnel FET-CMOS Co-Design by Compact Modeling and Simulation.
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| C. Bessire, A. Schenk, M.T. Björk, H. Schmid, K.B. Reuter, H. Riel |
- Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes
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Zitat anzeigen |
C. Bessire, A. Schenk, M.T. Björk, H. Schmid, K.B. Reuter, H. Riel, Trap-Assisted Tunneling in Si-InAs Nanowire Heterojunction Tunnel Diodes.
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| A. Schenk, S. Steingrube, O. Breitenstein, K. Ramspeck, S. Glunz, P.P. Altermatt |
- Explanation of Commonly Observed Shunt Currents in c-Si Solar Cells by Means of Recombination Statistics beyond the Shockley-Read-Hall Approximation
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Zitat anzeigen |
A. Schenk, S. Steingrube, O. Breitenstein, K. Ramspeck, S. Glunz, P.P. Altermatt, Explanation of Commonly Observed Shunt Currents in c-Si Solar Cells by Means of Recombination Statistics beyond the Shockley-Read-Hall Approximation.
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| M. Frey, A. Esposito, A. Schenk |
- Computational Comparison of Conductivity and Mobility Models for Silicon Nanowire Devices
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Zitat anzeigen |
M. Frey, A. Esposito, A. Schenk, Computational Comparison of Conductivity and Mobility Models for Silicon Nanowire Devices.
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